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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB688
DESCRIPTION With TO-3P(I) package Complement to type 2SD718 APPLICATIONS Power amplifier applications Recommend for 45~50W audio frequency amplifier output stage
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -8 -0.8 80 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ,IB=0 IC=-5A; IB=-0.5A IC=-5A ; VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V IE=0 ; VCB=-10V ;f=1MHz 55 10 280 MIN -120
2SB688
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT Cob
TYP.
MAX
UNIT V
-2.5 -1.5 -10 -10 160 |I |I
V V A A
MHz pF
hFE Classifications R 55-110 O 80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB688
Fig.2 Outline dimensions(unindicated tolerance:A
0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB688
4


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